Al-Moatasem El-Sayed
Orcid: 0000-0001-5191-1240Affiliations:
- Technical University of Vienna, Austria
According to our database1,
Al-Moatasem El-Sayed
authored at least 14 papers
between 2015 and 2022.
Collaborative distances:
Collaborative distances:
Timeline
2015
2016
2017
2018
2019
2020
2021
2022
0
1
2
3
4
5
1
4
4
1
2
1
1
Legend:
Book In proceedings Article PhD thesis Dataset OtherLinks
Online presence:
-
on orcid.org
On csauthors.net:
Bibliography
2022
Understanding and Modeling Opposite Impacts of Self-Heating on Hot-Carrier Degradation in n- and p-Channel Transistors.
Proceedings of the IEEE International Reliability Physics Symposium, 2022
Combining measurements and modeling/simulations analysis to assess carbon nanotube memory cell characteristics.
Proceedings of the IEEE International Reliability Physics Symposium, 2022
Metastability of Negatively Charged Hydroxyl-E' Centers and their Potential Role in Positive Bias Temperature Instabilities.
Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022
Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022
2021
Proceedings of the IEEE International Reliability Physics Symposium, 2021
Statistical Ab Initio Analysis of Electron Trapping Oxide Defects in the Si/SiO2 Network.
Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021
Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021
Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021
2020
Subband Structure and Ballistic Conductance of a Molybdenum Disulfide Nanoribbon in Topological 1T' Phase: A k·p Study.
Proceedings of the 27th International Conference on Mixed Design of Integrated Circuits and System, 2020
2019
Proceedings of the IEEE International Reliability Physics Symposium, 2019
Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants.
Proceedings of the 49th European Solid-State Device Research Conference, 2019
2018
Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence.
Microelectron. Reliab., 2018
Role of electron and hole trapping in the degradation and breakdown of SiO2 and HfO2 films.
Proceedings of the IEEE International Reliability Physics Symposium, 2018
2015
Proceedings of the IEEE International Reliability Physics Symposium, 2015