Akram A. Salman

According to our database, Akram A. Salman authored at least 6 papers between 2011 and 2020.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2020

Design Insights to Address Low Current ESD Failure and Power Scalability Issues in High Voltage LDMOS-SCR Devices.

Nagothu Karmel Kranthi, Boeila Sampath Kumar, Akram A. Salman, Gianluca Boselli, Mayank Shrivastava

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

How to Achieve Moving Current Filament in High Voltage LDMOS Devices: Physical Insights & Design Guidelines for Self-Protected Concepts.

Nagothu Karmel Kranthi, Chirag Garg, Boeila Sampath Kumar, Akram A. Salman, Gianluca Boselli, Mayank Shrivastava

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

Current Filament Dynamics Under ESD Stress in High Voltage (Bidirectional) SCRs and It's Implications on Power Law Behavior.

Nagothu Karmel Kranthi, Akram A. Salman, Gianluca Boselli, Mayank Shrivastava

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Physical Insights into the Low Current ESD Failure of LDMOS-SCR and its Implication on Power Scalability.

Nagothu Karmel Kranthi, Boeila Sampath Kumar, Akram A. Salman, Gianluca Boselli, Mayank Shrivastava

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2016

Improved inductive-system-level IEC ESD performance for automotive applications using mutual ballasted ESD protection technique.

Akram A. Salman, Farzan Farbiz, Ann Concannon, Hal Edwards, Gianluca Boselli

Microelectron. Reliab., 2016

2011

Gate-controlled field-effect diodes and silicon-controlled rectifier for charged-device model ESD protection in advanced SOI technology.

Shuqing Cao, Jung-Hoon Chun, Akram A. Salman, Stephen G. Beebe, Robert W. Dutton

Microelectron. Reliab., 2011