Akito Kuramata

According to our database, Akito Kuramata authored at least 5 papers between 2018 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2022

AlN-capped P-(AlxGal-x)2O3/Ga2O3 heterostructure field-effect transistors for near-junction thermal management of next generation power devices.

James Spencer Lundh, Hannah N. Masten, Kohei Sasaki, Alan G. Jacobs, Zhe Cheng, Joseph Spencer, Lei Chen, James C. Gallagher, Andrew D. Koehler, Keita Konishi, Samuel Graham, Akito Kuramata, Karl D. Hobart, Marko J. Tadjer

Proceedings of the Device Research Conference, 2022

2021

Operation Up to 600K of Vertical β-Ga2O3 Schottky Rectifier With 754V Reverse Breakdown Voltage.

Xinyi Xia, Minghan Xian, Patrick Carey, Chaker Fares, Fan Ren, Marko J. Tadjer, Steve J. Pearton, Thieu Quang Tu, Ken Goto, Akito Kuramata

Proceedings of the Device Research Conference, 2021

2018

Fast Recovery Performance of β-Ga2O3 Trench MOS Schottky Barrier Diodes.

Akio Takatsuka, Kohei Sasaki, Daiki Wakimoto, Quang Tu Thieu, Yuki Koishikawa, Jun Arima, Jun Hirabayashi, Daisuke Inokuchi, Yoshiaki Fukumitsu, Akito Kuramata, Shigenobu Yamakoshi

Proceedings of the 76th Device Research Conference, 2018

1.5 kV Vertical Ga2O3 Trench-MIS Schottky Barrier Diodes.

Wenshen Li, Kazuki Nomoto, Zongyang Hu, Nicholas Tanen, Kohei Sasaki, Akito Kuramata, Debdeep Jena, Huili Grace Xing

Proceedings of the 76th Device Research Conference, 2018

Recent Advances in Ga2O3 MOSFET Technologies.

Masataka Higashiwaki, Man Hoi Wong, Takafumi Kamimura, Yoshiaki Nakata, Chia-Hung Lin, Ravikiran Lingaparthi, Akinori Takeyama, Takahiro Makino, Takeshi Ohshima, Naoki Hatta, Kuniaki Yagi, Ken Goto, Kohei Sasaki, Shinya Watanabe, Akito Kuramata, Shigenobu Yamakoshi, Keita Konishi, Hisashi Murakami, Yoshinao Kumagai

Proceedings of the 76th Device Research Conference, 2018