Akira Nishiyama

According to our database, Akira Nishiyama authored at least 14 papers between 1988 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Process Planning with Removal of Melting Penetration and Temper Colors in 5-Axis Hybrid Additive and Subtractive Manufacturing.

Akira Nishiyama, Shun Kayashima, Nobuyuki Sumi, Takashi Hashimoto, Takeyuki Abe, Jun'ichi Kaneko

Int. J. Autom. Technol., 2023

2021

Infrared Emission Spectroscopic Imaging of Microplastics Using Long-Wavelength Infrared Hyperspectral Camera with Imaging-Type Two-Dimensional Fourier Spectroscopy.

Kosuke Nogo, Kou Ikejima, Wei Qi, Tomoya Kitazaki, Hiroshi Kanasaki, Kazushi Hamada, Kenji Wada, Akira Nishiyama, Ichiro Ishimaru

Proceedings of the 11th Workshop on Hyperspectral Imaging and Signal Processing: Evolution in Remote Sensing, 2021

2015

Electron transport mechanism of tungsten trioxide powder thin film studied by investigating effect of annealing on resistivity.

Wei Li, Akito Sasaki, Hideyuki Oozu, Katsuaki Aoki, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai

Microelectron. Reliab., 2015

Improvement of charge/discharge performance for lithium ion batteries with tungsten trioxide electrodes.

Wei Li, Akito Sasaki, Hideyuki Oozu, Katsuaki Aoki, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai

Microelectron. Reliab., 2015

2014

A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability.

Yan Wu, Hiroyuki Hasegawa, Kuniyuki Kakushima, Kenji Ohmori, Takanobu Watanabe, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Yoshinori Kataoka, Kenji Natori, Keisaku Yamada, Hiroshi Iwai

Microelectron. Reliab., 2014

Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement.

Chunmeng Dou, Tomoya Shoji, Kazuhiro Nakajima, Kuniyuki Kakushima, Parhat Ahmet, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai

Microelectron. Reliab., 2014

Chromatin Properties of Regulatory DNA Probed by Manipulation of Transcription Factors.

Alexei A. Sharov, Akira Nishiyama, Yong Qian, Dawood B. Dudekula, Dan L. Longo, David Schlessinger, Minoru S. H. Ko

J. Comput. Biol., 2014

2013

Precision Controlled Variable Phase Filter for Imaging Type Two-Dimensional Spectroscopic Tomography.

Pradeep Kumara Wijesekara Abeygunawardhana, Satoru Suzuki, Ichirou Ishimaru, Akira Nishiyama

Proceedings of the International Conference on Social Computing, SocialCom 2013, 2013

Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT.

Takamasa Kawanago, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai

Proceedings of the European Solid-State Device Research Conference, 2013

2012

Oxide and interface trap densities estimation in ultrathin W/La₂O₃/Si MOS capacitors.

M. Mamatrishat, T. Kubota, T. Seki, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai

Microelectron. Reliab., 2012

Resistive switching behavior of a CeO₂ based ReRAM cell incorporated with Si buffer layer.

Chunmeng Dou, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai

Microelectron. Reliab., 2012

(100)- and (110)-oriented nMOSFETs with highly scaled EOT in La-silicate/Si interface for multi-gate architecture.

Takamasa Kawanago, Kuniyuki Kakushima, Parhat Ahmet, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Kazuo Tsutsui, Kenji Natori, Takeo Hattori, Hiroshi Iwai

Proceedings of the 2012 European Solid-State Device Research Conference, 2012

2011

Effects of La₂O₃ incorporation in HfO₂ gated nMOSFETs on low-frequency noise.

D. Zade, Soshi Sato, Kuniyuki Kakushima, A. Srivastava, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Chandan Kumar Sarkar, Hiroshi Iwai

Microelectron. Reliab., 2011

1988

An optimized 1.0- mu m CMOS technology for next-generation channelless gate arrays.

Yukihiro Ushiku, Teruo Kobayashi, Akito Yoshida, Nobuyuki Itoh, Akira Nishiyama, Rempei Nakata

IEEE J. Solid State Circuits, April, 1988