Akio Wakejima

According to our database, Akio Wakejima authored at least 5 papers between 2005 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2022

AlGaN/GaN HEMT on 3C-SiC/Low-Resistivity Si Substrate for Microwave Applications.

Akio Wakejima, Arijit Bose, Debaleen Biswas, Shigeomi Hishiki, Sumito Ouchi, Koichi Kitahara, Keisuke Kawamura

IEICE Trans. Electron., October, 2022

Influence of a thick nitride layer on transmission loss in GaN-on-3C-SiC/low resistivity Si.

Arijit Bose, Debaleen Biswas, Shigeomi Hishiki, Sumito Ouchi, Koichi Kitahara, Keisuke Kawamura, Akio Wakejima

IEICE Electron. Express, 2022

2021

A Temperature Stable Amplifier Characteristics of AlGaN/GaN HEMTs on 3C-SiC/Si.

Arijit Bose, Debaleen Biswas, Shigeomi Hishiki, Sumito Ouchi, Koichi Kitahara, Keisuke Kawamura, Akio Wakejima

IEEE Access, 2021

2007

High Power GaN-FET Amplifier with Reduced Memory Effects for W-CDMA Base Stations.

Akio Wakejima, Kohji Matsunaga, Yuji Ando, Tatsuo Nakayama, Yasuhiro Okamoto, Kazuki Ota, Naotaka Kuroda, Masahiro Tanomura, Hironobu Miyamoto

IEICE Trans. Electron., 2007

2005

C-band GaAs FET power amplifiers with 70-W output power and 50% PAE for satellite communication use.

Akio Wakejima, Takahiro Asano, Takafumi Hirano, Masahiro Funabashi, Kohji Matsunaga

IEEE J. Solid State Circuits, 2005