Akio Ohta

According to our database, Akio Ohta authored at least 12 papers between 2011 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2022

Magnetic-Field Dependent Electron Transport of Fe₃Si Nanodots.

Jialin Wu, Katsunori Makihara, Hai Zhang, Noriyuki Taoka, Akio Ohta, Seiichi Miyazaki

IEICE Trans. Electron., October, 2022

Study on Electron Emission from Phosphorus δ-Doped Si-QDs/Undoped Si-QDs Multiple-Stacked Structures.

Katsunori Makihara, Tatsuya Takemoto, Shuji Obayashi, Akio Ohta, Noriyuki Taoka, Seiichi Miyazaki

IEICE Trans. Electron., October, 2022

2019

Characterization of Electron Field Emission from Multiple-Stacking Si-Based Quantum Dots.

Yuto Futamura, Katsunori Makihara, Akio Ohta, Mitsuhisa Ikeda, Seiichi Miyazaki

IEICE Trans. Electron., 2019

2017

Embedding of Ti Nanodots into SiO_x and Its Impact on Resistance Switching Behaviors.

Yusuke Kato, Akio Ohta, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki

IEICE Trans. Electron., 2017

2015

Resistance-Switching Characteristics of Si-rich Oxide Evaluated by Using Ni Nanodots as Electrodes in Conductive AFM Measurements.

Akio Ohta, Chong Liu, Takashi Arai, Daichi Takeuchi, Hai Zhang, Katsunori Makihara, Seiichi Miyazaki

IEICE Trans. Electron., 2015

2013

X-Ray Photoemission Study of SiO₂/Si/Si_0.55Ge_0.45/Si Heterostructures.

Akio Ohta, Katsunori Makihara, Seiichi Miyazaki, Masao Sakuraba, Junichi Murota

IEICE Trans. Electron., 2013

Evaluation of Chemical Composition and Bonding Features of Pt/SiO_x/Pt MIM Diodes and Its Impact on Resistance Switching Behavior.

Akio Ohta, Katsunori Makihara, Mitsuhisa Ikeda, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki

IEICE Trans. Electron., 2013

Control of Interfacial Reaction of HfO₂/Ge Structure by Insertion of Ta Oxide Layer.

Kuniaki Hashimoto, Akio Ohta, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki

IEICE Trans. Electron., 2013

Characterization of Resistive Switching of Pt/Si-Rich Oxide/TiN System.

Motoki Fukusima, Akio Ohta, Katsunori Makihara, Seiichi Miyazaki

IEICE Trans. Electron., 2013

2012

Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering.

Akio Ohta, Yuta Goto, Shingo Nishigaki, Guobin Wei, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki

IEICE Trans. Electron., 2012

2011

Impact of Annealing Ambience on Resistive Switching in Pt/TiO₂/Pt Structure.

Guobin Wei, Yuta Goto, Akio Ohta, Katsunori Makihara, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki

IEICE Trans. Electron., 2011

Characterization of Mg Diffusion into HfO₂/SiO₂/Si(100) Stacked Structures and Its Impact on Detect State Densities.

Akio Ohta, Daisuke Kanme, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki

IEICE Trans. Electron., 2011