Akinobu Teramoto
Orcid: 0000-0002-4655-9403
According to our database1,
Akinobu Teramoto
authored at least 13 papers
between 2001 and 2020.
Collaborative distances:
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Bibliography
2020
Effect of Drain-to-Source Voltage on Random Telegraph Noise Based on Statistical Analysis of MOSFETs with Various Gate Shapes.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
2018
Reliability of MgO in magnetic tunnel junctions formed by MgO sputtering and Mg oxidation.
Proceedings of the IEEE International Reliability Physics Symposium, 2018
Proceedings of the 2018 IEEE SENSORS, New Delhi, India, October 28-31, 2018, 2018
2014
A statistical evaluation of effective time constants of random telegraph noise with various operation timings of in-pixel source follower transistors.
Proceedings of the Image Sensors and Imaging Systems 2014, 2014
2013
Proceedings of 2013 International Conference on IC Design & Technology, 2013
A statistical evaluation of low frequency noise of in-pixel source follower-equivalent transistors with various channel types and body bias.
Proceedings of the Sensors, 2013
2012
The role of the temperature on the scattering mechanisms limiting the electron mobility in metal-oxide-semiconductor field-effect-transistors fabricated on (110) silicon-oriented wafers.
Proceedings of the 2012 European Solid-State Device Research Conference, 2012
2009
Data Analysis Technique of Atomic Force Microscopy for Atomically Flat Silicon Surfaces.
IEICE Trans. Electron., 2009
2008
Accurate negative bias temperature instability lifetime prediction based on hole injection.
Microelectron. Reliab., 2008
2007
Examination of degradation mechanism due to negative bias temperature stress from a perspective of hole energy for accurate lifetime prediction.
Microelectron. Reliab., 2007
High quality gate insulator film formation on SiC using by microwave-excited high-density plasma.
Microelectron. Reliab., 2007
Circuit level prediction of device performance degradation due to negative bias temperature stress.
Microelectron. Reliab., 2007
2001
Time-dependent dielectric breakdown of SiO<sub>2</sub> films in a wide electric field range.
Microelectron. Reliab., 2001