Adrian Vaisman Chasin
According to our database1,
Adrian Vaisman Chasin
authored at least 36 papers
between 2008 and 2024.
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Bibliography
2024
Proceedings of the IEEE International Reliability Physics Symposium, 2024
Light-Assisted Investigation of the Role of Oxygen Flow during IGZO Deposition on Deep Subgap States and their Evolution Under PBTI.
Proceedings of the IEEE International Reliability Physics Symposium, 2024
DC Reliability Study of $\text{high}-\kappa$ GaN-on-Si MOS-HEMT's for mm-Wave Power Amplifiers.
Proceedings of the IEEE International Reliability Physics Symposium, 2024
Investigation of the Impact of Ferroelectricity Boosted Gate Stacks for 3D NAND on Short Time Data Retention and Endurance.
Proceedings of the IEEE International Reliability Physics Symposium, 2024
Side and Corner Region Non-Uniformities in Grown SiO2 and Their Implications on Current, Capacitance and Breakdown Characteristics.
Proceedings of the IEEE International Reliability Physics Symposium, 2024
2023
Lowest IOFF < 3×10<sup>-21</sup> A/μm in capacitorless DRAM achieved by Reactive Ion Etch of IGZO-TFT.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
Proceedings of the IEEE International Reliability Physics Symposium, 2023
2022
Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and Ion > 30 µA/µm.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022
Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2022
Understanding and Modeling Opposite Impacts of Self-Heating on Hot-Carrier Degradation in n- and p-Channel Transistors.
Proceedings of the IEEE International Reliability Physics Symposium, 2022
Trap-polarization interaction during low-field trap characterization on hafnia-based ferroelectric gatestacks.
Proceedings of the IEEE International Reliability Physics Symposium, 2022
Degradation mechanism of amorphous IGZO-based bipolar metal-semiconductor-metal selectors.
Proceedings of the IEEE International Reliability Physics Symposium, 2022
Proceedings of the IEEE International Reliability Physics Symposium, 2022
Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors.
Proceedings of the IEEE International Reliability Physics Symposium, 2022
Evaluating Forksheet FET Reliability Concerns by Experimental Comparison with Co-integrated Nanosheets.
Proceedings of the IEEE International Reliability Physics Symposium, 2022
Proceedings of the IEEE International Reliability Physics Symposium, 2022
Proceedings of the IEEE International Reliability Physics Symposium, 2022
Device engineering guidelines for performance boost in IGZO front gated TFTs based on defect control.
Proceedings of the International Conference on IC Design and Technology, 2022
2021
The properties, effect and extraction of localized defect profiles from degraded FET characteristics.
Proceedings of the IEEE International Reliability Physics Symposium, 2021
Proceedings of the IEEE International Reliability Physics Symposium, 2021
2020
Conduction and Breakdown Mechanisms in Low-k Spacer and Nitride Spacer Dielectric Stacks in Middle of Line Interconnects.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
2019
Role of Defects in the Reliability of HfO2/Si-Based Spacer Dielectric Stacks for Local Interconnects.
Proceedings of the IEEE International Reliability Physics Symposium, 2019
Full (V<sub>g</sub>, V<sub>d</sub>) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2019
Proceedings of the IEEE International Reliability Physics Symposium, 2019
Array-Based Statistical Characterization of CMOS Degradation Modes and Modeling of the Time-Dependent Variability Induced by Different Stress Patterns in the {V<sub>G</sub>, V<sub>D</sub>} bias space.
Proceedings of the IEEE International Reliability Physics Symposium, 2019
Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants.
Proceedings of the 49th European Solid-State Device Research Conference, 2019
Impact of Device Architecture and Gate Stack Processing on the Low-Frequency Noise of Silicon Nanowire Transistors.
Proceedings of the 13th IEEE International Conference on ASIC, 2019
2018
A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability.
Microelectron. Reliab., 2018
Proceedings of the IEEE International Reliability Physics Symposium, 2018
Hot electron and hot hole induced degradation of SiGe p-FinFETs studied by degradation maps in the entire bias space.
Proceedings of the IEEE International Reliability Physics Symposium, 2018
Proceedings of the IEEE International Reliability Physics Symposium, 2018
2014
Impact of etch stop layer on negative bias illumination stress of amorphous Indium Gallium Zinc Oxide transistors.
Proceedings of the 44th European Solid State Device Research Conference, 2014
2012
Bidirectional communication in an HF hybrid organic/solution-processed metal-oxide RFID tag.
Proceedings of the 2012 IEEE International Solid-State Circuits Conference, 2012
2009
Int. J. Control, 2009
2008
A High Power Density Electrostatic Vibration-to-Electric Energy Converter Based On An In-Plane Overlap Plate (IPOP) Mechanism
CoRR, 2008