Adrián Faigón

According to our database, Adrián Faigón authored at least 2 papers between 2002 and 2021.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2021

Total Ionizing Dose Effects on Floating Gate Structures. Preliminary Results.

Sebastian Carbonetto, Luciano Genovese, Lucas Sambuco Salomone, Mariano Garcia Inza, Eduardo Gabriel Redin, Adrián Faigón

Proceedings of the 22nd IEEE Latin American Test Symposium, 2021

2002

Modeling of the I-V characteristics of high-field stressed MOS structures using a Fowler-Nordheim-type tunneling expression.

Enrique Miranda, Gabriel Redin, Adrián Faigón

Microelectron. Reliab., 2002