Adelmo Ortiz-Conde

Orcid: 0000-0001-5073-5396

According to our database1, Adelmo Ortiz-Conde authored at least 13 papers between 2001 and 2017.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Bibliography

2017
A review of DC extraction methods for MOSFET series resistance and mobility degradation model parameters.
Microelectron. Reliab., 2017

2015
A unified look at the use of successive differentiation and integration in MOSFET model parameter extraction.
Microelectron. Reliab., 2015

2013
Revisiting MOSFET threshold voltage extraction methods.
Microelectron. Reliab., 2013

2011
An explicit multi-exponential model for semiconductor junctions with series and shunt resistances.
Microelectron. Reliab., 2011

2010
Integration-based approach to evaluate the sub-threshold slope of MOSFETs.
Microelectron. Reliab., 2010

2009
Indirect fitting procedure to separate the effects of mobility degradation and source-and-drain resistance in MOSFET parameter extraction.
Microelectron. Reliab., 2009

2006
Understanding threshold voltage in undoped-body MOSFETs: An appraisal of various criteria.
Microelectron. Reliab., 2006

Comments on "A sinh Resistor and Its Application to tanh Linearization".
IEEE J. Solid State Circuits, 2006

2002
Implementation of a comprehensive and robust MOSFET model in cadence SPICE for ESD applications.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2002

Quasi-three-dimensional spice-based simulation of the transient behavior, including plasma spread, of thyristors and over-voltage protectors.
Microelectron. Reliab., 2002

A review of recent MOSFET threshold voltage extraction methods.
Microelectron. Reliab., 2002

Influence of polysilicon-gate depletion on the subthreshold behavior of submicron MOSFETs.
Microelectron. Reliab., 2002

2001
Determination of trap cross-section in a-Si: H p-i-n diodes parameters using simulation and parameter extraction.
Microelectron. Reliab., 2001


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