Adam W. DiVergilio

According to our database, Adam W. DiVergilio authored at least 5 papers between 2019 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2024

High Temperature Annealing induced recovery of Hot-Carrier degradation in High Performance NPN SiGe HBTs.

Dimitris P. Ioannou, Adam W. DiVergilio

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2024

Practical Simulation and Test Strategies for Advanced Heterojunction Bipolar Transistors.

Adam W. DiVergilio

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2024

2022

Performance Improvements of SiGe HBTs in 90nm BiCMOS Process with fT/fmax of 340/410 GHz.

Uppili S. Raghunathan, Saurabh Sirohi, Vaibhav Ruparelia, Prateek Kumar Sharma, Dimitris P. Ioannou, Vibhor Jain, H. K. Kakara, S. Gedela, Venkat Vanukuru, P. Dongmo, C. Luce, R. Hazbun, R. Krishnasamy, J. Hwang, M. Levy, Kristin Welch, S. Liu, B. Cucci, S. Cole, J. Kantarovsky, A. Vallett, Ian McCallum-Cook, M. Yu, R. Phelps, Adam W. DiVergilio, A. Sturm, M. Peters, S. Johnson, R. Rassel, M. Lagerquist, M. Kerbaugh, K. Newton, John J. Pekarik, Qidi Liu

Proceedings of the 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2022

2021

Physics of Hot Carrier Degradation Under Off-State Mode Operation in High Performance NPN SiGe HBTs.

Dimitris P. Ioannou, Uppili S. Raghunathan, Dave Brochu, Adam W. DiVergilio, Vibhor Jain, John J. Pekarik

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2021

2019

Application of the Kull epilayer formulation to a compact model for junction diodes.

Adam W. DiVergilio

Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019