Abhitosh Vais

According to our database, Abhitosh Vais authored at least 6 papers between 2014 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2022

III-V HBTs on 300 mm Si substrates using merged nano-ridges and its application in the study of impact of defects on DC and RF performance.

Abhitosh Vais, Sachin Yadav, Yves Mols, Bjorn Vermeersch, Komal Vondkar Kodandarama, Marina Baryshnikova, G. Mannaert, R. Alcotte, Geert Boccardi, Piet Wambacq, Bertrand Parvais, R. Langer, Bernardette Kunert, Nadine Collaert

Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022

2021

A defect characterization technique for the sidewall surface of Nano-ridge and Nanowire based Logic and RF technologies.

Abhitosh Vais, Brent Hsu, Olga Syshchyk, Hao Yu, AliReza Alian, Yves Mols, Komal Vondkar Kodandarama, Bernardette Kunert, Niamh Waldron, Eddy Simoen, Nadine Collaert

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2018

Impact of slow and fast oxide traps on In0.53Ga0.47As device operation studied using CET maps.

Vamsi Putcha, Jacopo Franco, Abhitosh Vais, Ben Kaczer, S. Sioncke, Dimitri Linten, Guido Groeseneken

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2016

Beyond-Si materials and devices for more Moore and more than Moore applications.

Nadine Collaert, AliReza Alian, Hiroaki Arimura, Geert Boccardi, Geert Eneman, Jacopo Franco, Tsvetan Ivanov, Dennis Lin, Jérôme Mitard, S. Ramesh, R. Rooyackers, Marc Schaekers, A. Sibaya-Hernandez, S. Sioncke, Quentin Smets, Abhitosh Vais, A. Vandooren, Anabela Veloso, Anne S. Verhulst, Devin Verreck, Niamh Waldron, Amey Walke, Liesbeth Witters, H. Yu, X. Zhou, Aaron Voon-Yew Thean

Proceedings of the International Conference on IC Design and Technology, 2016

2015

The relationship between border traps characterized by AC admittance and BTI in III-V MOS devices.

Abhitosh Vais, Koen Martens, Jacopo Franco, Dennis Lin, AliReza Alian, Philippe Roussel, S. Sioncke, Nadine Collaert, Aaron Thean, Marc M. Heyns, Guido Groeseneken, Kristin De Meyer

Proceedings of the IEEE International Reliability Physics Symposium, 2015

2014

Determination of energy and spatial distribution of oxide border traps in In_0.53Ga_0.47As MOS capacitors from capacitance-voltage characteristics measured at various temperatures.

Chunmeng Dou, Dennis Lin, Abhitosh Vais, Tsvetan Ivanov, Han-Ping Chen, Koen Martens, Kuniyuki Kakushima, Hiroshi Iwai, Yuan Taur, Aaron Thean, Guido Groeseneken

Microelectron. Reliab., 2014