Aaron R. Arehart

According to our database, Aaron R. Arehart authored at least 4 papers between 2015 and 2016.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2016

Deep trap-induced dynamic on-resistance degradation in GaN-on-Si power MISHEMTs.

A. Sasikumar, Aaron R. Arehart, D. W. Cardwell, C. M. Jackson, W. Sun, Z. Zhang, S. A. Ringel

Microelectron. Reliab., 2016

Evidence for causality between GaN RF HEMT degradation and the E_C-0.57 eV trap in GaN.

Aaron R. Arehart, A. Sasikumar, Glen David Via, Brian S. Poling, E. R. Heller, S. A. Ringel

Microelectron. Reliab., 2016

2015

Identification of an RF degradation mechanism in GaN based HEMTs triggered by midgap traps.

A. Sasikumar, Aaron R. Arehart, Glen David Via, B. Winningham, Brian S. Poling, E. R. Heller, S. A. Ringel

Microelectron. Reliab., 2015

Proton irradiation-induced traps causing VT instabilities and RF degradation in GaN HEMTs.

A. Sasikumar, Z. Zhang, P. Kumar, En-xia Zhang, Daniel M. Fleetwood, Ronald D. Schrimpf, Paul Saunier, Cathy Lee, S. A. Ringel, Aaron R. Arehart

Proceedings of the IEEE International Reliability Physics Symposium, 2015