A. N. Nazarov

According to our database, A. N. Nazarov authored at least 5 papers between 2002 and 2007.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2007

Charge trapping characterization of MOCVD HfO₂/p-Si interfaces at cryogenic temperatures.

I. P. Tyagulskyy, I. N. Osiyuk, V. S. Lysenko, A. N. Nazarov, Steve Hall, Octavian Buiu, Y. Lu, Richard Potter, Paul R. Chalker

Microelectron. Reliab., 2007

Charge accumulation in the dielectric of the nanocluster NVM MOS structures under anti- and unipolar W/E window formation.

V. I. Turchanikov, A. N. Nazarov, V. S. Lysenko, V. Ostahov, O. Winkler, B. Spangenberg, H. Kurz

Microelectron. Reliab., 2007

Charge trapping and interface states in hydrogen annealed HfO₂-Si structures.

Y. V. Gomeniuk, A. N. Nazarov, Ya. N. Vovk, V. S. Lysenko, Yi Lu, Octavian Buiu, Steve Hall, R. J. Potter, Paul R. Chalker

Microelectron. Reliab., 2007

2005

Charge storage peculiarities in poly-Si-SiO₂-Si memory devices with Si nanocrystals rich SiO₂.

V. I. Turchanikov, A. N. Nazarov, V. S. Lysenko, Josep Carreras, B. Garrido

Microelectron. Reliab., 2005

2002

Charge trapping and degradation in Ge⁺ ion implanted SiO₂ layers during high-field electron injection.

A. N. Nazarov, I. N. Osiyuk, V. S. Lysenko, T. Gebel, Lars Rebohle, W. Skorupa

Microelectron. Reliab., 2002