A. Meinertzhagen

According to our database, A. Meinertzhagen authored at least 5 papers between 2001 and 2005.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of four.

2005

Low voltage SILC and P- and N-MOSFET gate oxide reliability.

Christian Petit, A. Meinertzhagen, Damien Zander, O. Simonetti, M. Fadlallah, T. Maurel

Microelectron. Reliab., 2005

2003

Contribution of oxide traps on defect creation and LVSILC conduction in ultra thin gate oxide devices.

Damien Zander, F. Saigné, A. Meinertzhagen, Christian Petit

Microelectron. Reliab., 2003

Influence of nitradation in ultra-thin oxide on the gate current degradation of N and PMOS devices.

M. Fadlallah, C. Petit, A. Meinertzhagen, Gérard Ghibaudo, M. Bidaud, O. Simonetti, F. Guyader

Microelectron. Reliab., 2003

2001

Creation and thermal annealing of interface states induced by uniform or localized injection in 2.3nm thick oxides.

D. Zander, F. Saigné, A. Meinertzhagen

Microelectron. Reliab., 2001

High field stress at and above room temperature in 2.3 nm thick oxides.

Damien Zander, Christian Petit, F. Saigné, A. Meinertzhagen

Microelectron. Reliab., 2001