A. Kerber

According to our database, A. Kerber authored at least 6 papers between 2006 and 2018.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2018

Bottom-up methodology for predictive simulations of self-heating in aggressively scaled process technologies.

D. Singh, Oscar D. Restrepo, P. P. Manik, N. Rao Mavilla, H. Zhang, Peter C. Paliwoda, S. Pinkett, Y. Deng, Eduardo Cruz Silva, Jeffrey B. Johnson, M. Bajaj, S. Furkay, Z. Chbili, A. Kerber, C. Christiansen, S. Narasimha, E. Maciejewski, S. Samavedam, C.-H. Lin

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Ambient temperature and layout impact on self-heating characterization in FinFET devices.

Peter C. Paliwoda, Zakariae Chbili, A. Kerber, D. Singh, Durga Misra

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2015

NBTI in Si0.5Ge0.5 RMG gate stacks - Effect of high-k nitridation.

P. Srinivasan, J. Fronheiser, S. Siddiqui, A. Kerber, L. F. Edge, Richard G. Southwick, Eduard Cartier

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Impact of RTN on stochastic BTI degradation in scaled metal gate/high-k CMOS technologies.

A. Kerber

Proceedings of the IEEE International Reliability Physics Symposium, 2015

2007

Reliability screening of high-k dielectrics based on voltage ramp stress.

A. Kerber, Luigi Pantisano, Anabela Veloso, Guido Groeseneken, Martin Kerber

Microelectron. Reliab., 2007

2006

Gate voltage and oxide thickness dependence of progressive wear-out of ultra-thin gate oxides.

T. Pompl, A. Kerber, M. Röhner, Martin Kerber

Microelectron. Reliab., 2006