A. F. Shulekin

According to our database, A. F. Shulekin authored at least 4 papers between 2001 and 2006.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2006

The post-damage behavior of a MOS tunnel emitter transistor.

S. E. Tyaginov, M. I. Vexler, A. F. Shulekin, I. V. Grekhov

Microelectron. Reliab., 2006

Tunnel charge transport within silicon in reversely-biased MOS tunnel structures.

M. I. Vexler, A. El Hdiy, D. Grgec, S. E. Tyaginov, R. Khlil, Bernd Meinerzhagen, A. F. Shulekin, I. V. Grekhov

Microelectron. J., 2006

2004

Soft breakdown of MOS tunnel diodes with a spatially non-uniform oxide thickness.

R. Khlil, A. El Hdiy, A. F. Shulekin, S. E. Tyaginov, M. I. Vexler

Microelectron. Reliab., 2004

2001

Threshold energies in the light emission characteristics of silicon MOS tunnel diodes.

N. Asli, M. I. Vexler, A. F. Shulekin, P. Douglas Yoder, I. V. Grekhov, Peter Seegebrecht

Microelectron. Reliab., 2001