A. Debald

According to our database, A. Debald authored at least 2 papers between 2018 and 2019.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2019

Extraction of the active acceptor concentration in (pseudo-) vertical GaN MOSFETs using the body-bias effect.

Raoul Hentschel, Andre Wachowiak, A. Großer, Simon Kotzea, A. Debald, Holger Kalisch, Andrei Vescan, A. Jahn, Stefan Schmult, Thomas Mikolajick

Microelectron. J., 2019

2018

Novel approach for a monolithically integrated GaN cascode with minimized conduction and switching losses.

H. Hahn, H. Yacoub, T. Zweipfennig, G. Lukens, Simon Kotzea, A. Debald, A. N. Oculak, Renato Negra, Holger Kalisch, Andrei Vescan

Proceedings of the 76th Device Research Conference, 2018